0.038 (0.97) 0.100 (2.54) 0.050 (1.27) 45 0.046 (1.16) 0.036 (0.92) 1 3 0.030 (0.76) nom 0.195 (4.95) 0.178 (4.52) 0.230 (5.84) 0.209 (5.31) 0.500 (12.7) m i n 0.255 (6.47) 0.225 (5.71) ? 0.020 (0.51) 3 x 2 p ackage dimensions fea tures ? hermetically sealed package ? narrow reception angle notes: 1. dimensions for all drawings are in inches (mm). 2. t olerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. description the l14g1/l14g2/l14g3 are silicon phototransistors mounted in a narrow angle, t o-18 package. 1 emitter (connected t o case) collect or 3 base 2 schema tic hermetic silicon phot otransist or l14g1 l14g2 l14g3
s t i n u x a m p y t n i m l o b m y s s n o i t i d n o c t s e t r e t e m a r a p collector-emitter breakdow n i c = 10 ma, ee = 0 b v ceo 45 ? v i n w o d k a e r b e s a b - r e t t i m e e = 100 a, ee = 0 b v ebo 5.0 ? v collector-base breakdow n i c = 100 a, ee = 0 bv cbo 45 ? v collector-emitter leakag e v ce = 10 v , ee = 0 i ceo ? 100 na reception angle at 1/2 sensitivity 10 degrees on-state collector current l14g1 ee = 0.5 mw/cm 2 , v ce = 5 v (7,8) i c(on) 1.0 ? ma on-state collector current l14g2 ee = 0.5 mw/cm 2 , v ce = 5 v (7,8) i c(on) a m 5 . 0 on-state collector current l14g3 ee = 0.5 mw/cm 2 , v ce = 5 v (7,8) i c(on) a m 0 . 2 t urn-on t ime i c = 2 ma, v cc = 10 v , r l =100 t o n 8 s t urn-of f t ime i c = 2 ma, v cc = 10 v , r l =100 t o ff 7 s saturation v oltage i c = 1.0 ma, e e = 3.0 mw/cm 2(7,8) v ce(sa t ) ? 0.40 v electrical / optical characteristics (t a =25c) (all measurements made under pulse conditions) t i n u g n i t a r l o b m y s r e t e m a r a p t e r u t a r e p m e t g n i t a r e p o opr -65 to +125 c t e r u t a r e p m e t e g a r o t s stg -65 to +150 c soldering t emperature (iron) (3,4,5 and 6) t sol-i 240 for 5 sec c soldering t emperature (flow) (3,4 and 6) t sol-f 260 for 10 sec c collector to emitter breakdown v oltage v ceo v 5 4 v e g a t l o v n w o d k a e r b e s a b o t r o t c e l l o c cbo v 5 4 v e g a t l o v n o w d k a e r b e s a b o t r e t t i m e ebo v 5 power dissipatio n (t a = 25c) (1) p d w m 0 0 3 power dissipatio n (t c = 25c) (2) p d w m 0 0 6 absolute maximum ra tings (t a = 25c unless otherwise specified) note: 1. derate power dissipation linearly 3.00 mw/c above 25c ambient. 2. derate power dissipation linearly 6.00 mw/c above 25c case. 3. rma flux is recommended. 4. methanol or isopropyl alcohols are recommended as cleaning agents. 5. soldering iron tip 1/16? (1.6mm) minimum from housing. 6. as long as leads are not under any stress or spring tension. 7. light source is a gaas led emitting light at a peak wavelength of 940 nm. 8. figure 1 and figure 2 use light source of tungsten lamp at 2870k color temperature. a gaas source of 3.0 mw/cm 2 is approximately equivalent to a tungsten source, at 2870k, of 10 mw/cm 2 . hermetic silicon phot otransist or l14g1 l14g2 l14g3
figure 1. light current vs. collector to emitter voltage .01 v ce , collector to emitter voltage (v) .01 1 .1 10 .1 1 10 100 i l , normalized light current figure 3. normalized light current vs. temperature 0.1 0 1 10 0 5 0 5 - i l , normalized light current i l , normalized light current 100 150 figure 2. light current vs. temperature .01 .1 .1 e e - total irradiance in mw/cm 2 1 10 1 i l , normalized light current t on and t off , normalized turn on and turn off times 10 100 t a , temperature ( c) t a , temperature ( c) t a , temperature ( c) i l , output current (ma ) normalized to: v ce = 5 v e e = 10 mw/cm 2 t a = 25 c figure 4. switching times vs. output current .01 1 10 0 0 1 0 . 1 1 . 10 ee = 2 mw/cm 2 ee = 5 mw/cm 2 ee = 10 mw/cm 2 ee = 1 mw/cm 2 ee = 20 mw/cm 2 normalized to: e e = 10 mw/cm 2 v ce = 5 v normalized to: v ce = 5 v e e = 10 mw/cm 2 figure 5. dark current and temperature 10 6 0 1 .1 10 4 10 2 10 5 10 3 10 0 5 1 0 5 75 100 125 i d , normalized dark current 25 figure 6. normalized light current vs. temperature both emitter (led 55b) and detector (l14g) at same temperature .0 .2 .4 .6 .8 1.0 1.2 1.4 55 15 35 5 25 65 5 0 1 5 4 85 normalized to: led 55b input = 10 ma v ce = 10 v i l = 100 a t a = 25 c normalized to: v ce = 10 v i l = 2 ma i on = i off = 5 sec r l = 100 r l = 1 k r l = 100 r l = 10 normalized to: i d @ 25 c v ceo = 10 v led 55b l14g hermetic silicon phot otransist or l14g1 l14g2 l14g3
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